On June 4, 1968, Robert Dennard was granted a patent for a single transistor, single capacitor DRAM cell design idea. This doesn’t sound earth-shattering today, but back in the sixties, this was a ...
Pierre C. Fazan, Innovative Silicon Solutions, Le Landeron, Switzerland, Serguei Okhonin, Mikhail Nagoga, Jean-Michel Sallese, Swiss Federal Institute of Technology, Innovative Silicon Solutions, Le ...
Neo Semiconductor has announced the world’s first 3D stackable DRAM technology, called 3D X-DRAM, that could revolutionize computer memory. Neo estimates 3D X-DRAM can achieve 128Gb density with 230 ...
TOKYO — Swiss-based Innovative Silicon Solutions (ISS) and the Swiss Federal Institute of Technology have developed a silicon-on-insulator based single-transistor DRAM cell prototype that will scale ...
This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a novel dynamic random-access ...
As DRAM scaling slows, the industry will need to look for other ways to keep pushing for more and cheaper bits of memory. The most common way of escaping the limits of planar scaling is to add the ...
A technical paper titled “DRAMScope: Uncovering DRAM Microarchitecture and Characteristics by Issuing Memory Commands” was published by researchers at Seoul National University and University of ...
Something to look forward to: The memory industry is known for its conservative approach, often favoring incremental improvements over revolutionary changes. But as we look toward the end of the ...
For applications where performance is of primary importance, designers have traditionally chosen SRAM technology over DRAM. Although commodity DRAM offers much higher density and a lower cost per bit, ...
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