PMOS transistors are less vulnerable to substrate noise since they’re placed in separate wells; designers implement guard rings to attenuate the substrate noise propagation. However, substrate noise ...

For years—decades, in fact—the NMOS transistor world has been on cruise control. NMOS is naturally faster and its performance has scaled better than PMOS. PMOS has had a cost advantage. But lately, it ...

Austin, Texas – Intel Corp. and Texas Instruments Inc. process engineers are opening up about how they have strained-literally-to boost the performance of 90-nanometer silicon at only a marginal ...

—The development of a process flow capable of demonstrating functionality of a monolithic complementary FET (CFET) transistor architecture is complex due to the need to vertically separate nMOS and ...

Even as industry moves into the era of the high k metal gate (HKMG) and FinFET transistor, chipmakers continue to seek ways to improve device performance. One of the latest advances and the subject of ...

All operational amplifier (op-amp) datasheets have an input voltage range limitation called the common-mode range. Strictly speaking, the common-mode voltage is the average voltage on the two inputs ...

Intel is in production with several 65-nm processors now, creating an inventory of commercial microprocessor products that will begin shipping early next year. At the IEDM conference, Intel showed die ...

Their paper details 3D sequential integration of silicon-germanium (SiGe) heterojunction bipolar transistors (HBT), RF SOI switches, and high-quality passives on a single wafer—opening a path to ...