I attended an AI conference in Seattle and participated in the 2025 IEDM and its celebration of the 100th anniversary of the ...

Diamond field-effect transistors (FETs) represent a cutting-edge development in semiconductor technology, leveraging the exceptional thermal conductivity, high breakdown voltage, and chemical ...

Carbon Nanotube Field-Effect Transistors (CNTFETs) represent a pivotal advancement in nanoelectronics, employing the extraordinary electrical properties of carbon nanotubes to achieve superior ...

Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are a type of field-effect transistors (FETs) designed to operate at very high frequencies with low noise. As such, they have ...

With the right mix of materials, TFETs promise cooler, smaller, and more efficient circuits for everything from the Internet of Things to brain-inspired computers. But before they can leave the lab, ...

A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...

A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...

Herein, wafer-scale 8-nm films of Sn-doped gallium oxide (Ga 2 O 3) were fabricated via physical vapor deposition at room temperature. Using these films, 8-nm Sn-doped Ga 2 O 3 field-effect ...